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Description:
The panel level PVD can be performed at both sides of the panel simultaneously. It is high efficient and time saving process. The panel sizes are varied within 300mm-600mm. Ti/Cu can be performed as the seed layers. The thickness is controlled with 0.1-2 micro meters. The uniformity in controlled with 5%. normal process time of PVD (Ti/Cu:0.1/0.5 um) can be finished within 30 minutes. The typical PVD description can be shown below.
Panel size:510*515mm
Metal: Ti/Cu
Film thickness uniformity: ≤5%
Applications:
Used for GPU/CPU/AI chips on super computing, sever, cloud application.
Competitive Advantage:
1. Seed layers for plating
2. Uniformity is within 5%
3. Good adhesion between Cu and substrate