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Description:
Die with bump of MOS&MOS-Like package can be picked and placed onto the temporary carrier; C mold is performed after above die placement with face-up methodology. The mold grinding, PVD and plating will be made for RDL. The TMV will be made for the top/bot layer connection. The surface treanment and laser cutting will be performed. The process is simple and has the advantage of low cost.
Competitive Advantage: